CBE-grown InGaAs/InP QW structures: an extensive investigation

摘要

Chemical beam epitaxially (CBE) grown InGaAs/InP MQW interfaces were analyzed to explain experimental data from high-quality single and multiple quantum wells (QWs). An exponential decay of the group V flux leading to non-negligible effects for several seconds after the switch are assumed to explain photoluminescence (PL) and X-ray diffraction (XRD) results, even for a very fast flux switching system. The very intense absorption peak and the high number of satellite peaks in the diffraction rocking curve obtained even on samples grown in non-optimized conditions confirm the potential of CBE.