Planar pin-photodiodes based on heteroepitaxial structures InGaAs / InP

摘要

Planar pin-photodiode relates to semiconductor photosensitive devices, recording radiation in the wavelength range of 0.9-1.7 microns.; The utility model provides an increase in speed planar pin-photodiode structures based on heteroepitaxial In-GaAs / InP upon absorption of radiation in neobednennoy n-region to the left and right of the pn-junction.; Increased performance is achieved in that a planar pin-photodiode based on heteroepitaxial structures of InGaAs / InP, comprising a high-alloy substrate InP n + -type conduction 1 on which an epitaxial method grown highly doped buffer n + layer of InP 2, the light absorbing layer InGaAs n-type conduction 3 layer and the entrance window InP n-type conduction 4, the photosensitive region 6, p + type conductivity, formed in the layers 3 and 4 locally through an opening in the insulating passivation layer Si ₃ n _4, 5 by diffusion, antireflection dormancy rytie contacts 7 and 8 to the n- and p-areas 9, the additional area included "pocket" 10, formed, odnovremennno a photosensitive region 6 and the contact 11 is formed in a single process with p-terminal 9.