Investigation of He + -ion bombardment in the fabrication of planar InP/ InGaAs HBT structure

摘要

We have investigated He+-ion bombardment on lattice-matched multi-layer InP/ In0.53Ga0.47As and In0.5Ga0.5P/ GaAs heterojunction bipolar transistor (HBT) structures. The bombardment of these structures was tested with a single energy implantation of helium-ions at 600 keV with a dose of 3x10 15 cm-2 at room temperature. Post implant annealing was performed for 60s from 50 to 575 o C. Maximum achievable sheet resistance of 3x10 7 W/sq was recorded for the GaAs-based base and collector layers of the InGaP/ GaAs HBT structure and 8x10 4 W/sq for the InGaAs-based collector layer of the InP/ InGaAs HBT structure. Comparison of annealing characteristics of bombarded GaAs- and InP- based HBT structures as a function of annealing temperature are reported here.