Semi-insulating InP:Fe regrowth by hydride VPE around P-InP substrate laser mesas fabricated by reactive ion etching

摘要

The regrowth of SI-InP:Fe by hydride vapor-phase epitaxy (HVPE) around reactive-ion-etched (RIE) vertical mesas of lasers grown on Zn-doped p-InP substrate is described. The laser performance measurements show that at 20 degrees C, the DC and pulsed power saturation currents are 300 mA and <600 mA, or 20 and <40 times the threshold current, respectively. The characteristic temperature is 63 K. It is inferred that the overall performance can be improved by minimizing the actual series resistance of 5.6 Omega . The regrown SI-InP:Fe is highly current blocking despite its adjacency to InP:Zn substrate.