MOVPE regrowth of semi-insulating InP around reactive ion etched laser mesas

摘要

Semi-insulating iron doped InP was grown with MOVPE around reactive ion etched laser mesas without using any wet etchant to optimise the mesa shape or to form a mask overhang. To achieve good planarity and selectivity, growth was performed at high temperature and low pressure. The resulting 3 dB modulation bandwidth of the buried heterostructure laser was 7.9 GHz at 10.5 mW.