US research activities on InP-based microwave and millimeter-wave devices and circuits

机译：美国在基于InP的微波和毫米波设备和电路方面的研究活动

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The history and current research status of microwave and millimeter-wave devices and circuits on InP substrates are outlined. The development of InGaAs/InAlAs MODFETs is reviewed. Future research in GaAs and InP solid-state technology is discussed.

机译：概述了InP衬底上微波和毫米波器件及电路的历史和当前研究现状。回顾了InGaAs / InAlAs MODFET的开发。讨论了GaAs和InP固态技术的未来研究。

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《Indium Phosphide and Related Materials, 1991., Third International Conference.》|1991年|P.xix-xxiv|共1页
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Shupe; D.; Fathimulla; A.;
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中图分类无线电电子学、电信技术;
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2. Optoelectronic approach to on-chip device and circuit characterization at microwave and millimeter-wave frequencies [J] . Rauscher C. IEEE Transactions on Microwave Theory and Techniques . 1991,第7期

机译：微波和毫米波频率下的片上器件和电路表征的光电方法
3. InP-based Membrane Optical Devices for Large-scale Photonic Integrated Circuits [J] . Takaaki Kakitsuka, Koichi Hasebe, Takuro Fujii, NTT Technical Review . 2015,第5期

机译：用于大规模光子集成电路的基于InP的膜光学器件
4. US research activities on InP-based microwave and millimeter-wave devices and circuits [C] . Shupe D., Fathimulla A., Institute of Electric and Electronic Engineer International Conference: Indium Phosphide and Related Materials . 1991

机译：美国研究活动基于INP的微波和毫米波装置和电路
5. Advanced CMOS Circuits for Microwave and Millimeter-Wave Communications. [D] . Cetinoneri, Berke. 2011

机译：用于微波和毫米波通信的高级CMOS电路。
6. Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication [O] . Omid Habibpour, Zhongxia Simon He, Wlodek Strupinski, -1

机译：高数据速率通信中基于外延石墨烯的晶圆级毫米波集成电路
7. InP-based devices and circuits for high performance microwave/millimeter wave applications [O] . Greiling Paul T. 1992

机译：适用于高性能微波/毫米波应用的基于InP的设备和电路
8. Active Devices for Monolithic Millimeter-Wave Integrated Circuits. [R] . Stoneking, D. E., Trew, R. J. 1991

机译：用于单片毫米波集成电路的有源器件。

US research activities on InP-based microwave and millimeter-wave devices and circuits

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