Active Devices for Monolithic Millimeter-Wave Integrated Circuits.

摘要

The purpose of this project was to develop an advanced computer aided design (CAD) tool that can be used for the design of microwave and millimeter-wave solid-state integrated circuits. The completed work consists of major improvements to a large-signal, physics based model for GaAs MESFET integrated circuits previously developed at NCSU. New features for the model include a large-signal load-pull algorithm and RF sensitivity and process yield capability. The new algorithms significantly enhance the use of the simulator in design applications. The new capability permits the simulator to be used for both MESFET and RF circuit process yield optimization. (Author)