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Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

机译:高数据速率通信中基于外延石墨烯的晶圆级毫米波集成电路

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摘要

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80–100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.
机译:近年来,对高数据速率无线通信的需求急剧增加,这需要更大的带宽来维持多用户可访问性和服务质量。这可以在毫米波频率下实现。石墨烯因其出色的电子传输性能而成为开发毫米波电子产品的有前途的材料。到目前为止,由于缺乏高质量的材料和工艺技术,已展示电路的工作频率远远低于石墨烯的潜力。在这里,我们介绍了基于外延石墨烯的单片集成电路,其工作在前所未有的高频率(80–100 GHz)下。所展示的电路能够将每秒几吉比特的信息编码/解码为载波信号的幅度或相位。开发的制造工艺可扩展至大晶圆尺寸。

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