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Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

机译:基于外延石墨烯的晶圆尺寸毫米波集成电路在高数据速率通信中

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In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80–100?GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.
机译:近年来,对高数据速率无线通信的需求显着增加,这需要更大的带宽来维持多用户可访问性和服务质量。这可以以毫米波频率实现。由于其出色的电子传输性能,石墨烯是一种有助于开发毫米波电子的材料。到目前为止,由于缺乏高质量的材料和工艺技术,所示电路的运行频率远远低于石墨烯的潜力。在这里,我们基于在前所未有的高频下操作的外延石墨烯(80-100?GHz)存在单片集成电路。所示的电路能够将多千兆位的每秒信息编码/解码到载波信号的幅度或相位中。开发的制造工艺可扩展到大的晶片尺寸。

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