Two-dimensional self-consistent simulation on program/retention operation of charge trapping memory

摘要

This paper presents a two dimensional numerical simulation on the program and retention operation of charge trapping memory. The developed simulator self-consistently solves two-dimensional Poisson equation, carrier continuity equation and trapped charge conservation equation. Driftdiffusion transport scheme is used for modeling the charge transport in the trapping layer. Major physical models, such as, direct, band-to-trap, trap-to-band tunneling and carrier capture and emission are incorporated into the simulator. The numerical simulation is able to study the programming and retention performance of charge trapping memory under different temperatures two-dimensionally. The simulation aims to investigate memory devices in scaled structures and especially in 3D applications.