首页> 外文会议>ACM/IEEE Design Automation Conference >WET: Write Efficient Loop Tiling for Non-Volatile Main Memory
【24h】

WET: Write Efficient Loop Tiling for Non-Volatile Main Memory

机译:WET:非易失性主存储器的高效写入循环切片

获取原文

摘要

Future systems are expected to increasingly include a Non-Volatile Main Memory (NVMM). However, due to the limited NVMM write endurance, the number of writes must be reduced. While new architectures and algorithms have been proposed to reduce writes to NVMM, few or no studies have looked at the effect of compiler optimizations on writes.In this paper, we investigate the impact of one popular compiler optimization (loop tiling) on a very important computation kernel (matrix multiplication). Our novel observation includes that tiling on matrix multiplication causes a 25× write amplification. Furthermore, we investigate techniques to make tilling more NVMM friendly, through choosing the right tile size and employing hierarchical tiling. Our method Write-Efficient Tiling (WET) adds a new outer tile designed for fitting the write working set to the Last Level Cache (LLC) to reduce the number of writes to NVMM. Our experiments reduce writes by 81% while simultaneously improve performance.
机译:未来的系统有望越来越多地包括非易失性主存储器(NVMM)。但是,由于有限的NVMM写耐久性,必须减少写次数。尽管已提出了新的体系结构和算法来减少对NVMM的写操作,但很少或没有研究关注编译器优化对写操作的影响。在本文中,我们研究了一种流行的编译器优化(循环切片)对非常重要的影响。计算内核(矩阵乘法)。我们的新颖观察结果包括,基于矩阵乘法的切片会导致25倍的写入放大。此外,我们研究了通过选择合适的图块大小并采用分层图块来使图块对NVMM更加友好的技术。我们的方法Write-Efficient Tiling(WET)添加了一个新的外部图块,该图块旨在将写入工作集适配到Last Level Cache(LLC),以减少对NVMM的写入次数。我们的实验将写入量减少了81%,同时提高了性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号