Towards Write-Activity-Aware Page Table Management for Non-volatile Main Memories

摘要

Non-volatile memories such as phase change memory (PCM) and memristor are being actively studied as an alternative to DRAM-based main memory in embedded systems because of their properties, which include low power consumption and high density. Though PCM is one of the most promising candidates with commercial products available, its adoption has been greatly compromised by limited write endurance. As main memory is one of the most heavily accessed components, it is critical to prolong the lifetime of PCM.