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Towards write-activity-aware page table management for non-volatile main memories

机译:面向非易失性主存储器的写活动感知页表管理

摘要

Non-volatile memories such as phase change memory (PCM) and memristor are being actively studied as an alternative to DRAM-based main memory in embedded systems because of their properties, which include low power consumption and high density. Though PCM is one of the most promising candidates with commercial products available, its adoption has been greatly compromised by limited write endurance. As main memory is one of the most heavily accessed components, it is critical to prolong the lifetime of PCM. In this article, we present write-activity-aware page table management (WAPTM), a simple yet effective page table management scheme for reducing unnecessary writes, by redesigning system software and exploiting write-activity-aware features provided by the hardware. We implemented WAPTM in Google Android based on the ARM architecture and evaluated it with real Android applications. Experimental results show that WAPTM can significantly reduce writes in page tables, proving the feasibility and potential of prolonging the lifetime of PCM-based main memory through reducing writes at the OS level.
机译:诸如相变存储器(PCM)和忆阻器之类的非易失性存储器由于其特性(包括低功耗和高密度)而正在积极研究,以替代嵌入式系统中基于DRAM的主存储器。尽管PCM是商用产品中最有前途的候选产品之一,但是由于有限的写入寿命,其采用受到了极大的影响。由于主存储器是访问量最大的组件之一,因此延长PCM的寿命至关重要。在本文中,我们介绍了可感知写活动的页表管理(WAPTM),这是一种简单有效的页表管理方案,可通过重新设计系统软件并利用硬件提供的可识别写活动的功能来减少不必要的写操作。我们在基于ARM体系结构的Google Android中实现了WAPTM,并使用实际的Android应用程序对其进行了评估。实验结果表明,WAPTM可以显着减少页表中的写操作,从而证明了通过在OS级别上减少写操作来延长基于PCM的主内存寿命的可行性和潜力。

著录项

  • 作者

    Wang T; Liu D; Wang Y; Shao Z;

  • 作者单位
  • 年度 2015
  • 总页数
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类

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