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Physics of Failure Based Reliability Model of High-Power InGaAs-AlGaAs Strained QW Lasers Prone to COBD Failure

机译:高功率InGaAs-AlGaAs应变QW激光器基于失效的可靠性模型

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Both broad-area and single-mode strained InGaAs-AlGaAs single quantum well (QW) lasers are indispensable components for both terrestrial and space satellite communications systems due to their excellent power and efficiency characteristics. However, their degradation mode (catastrophic and sudden degradation) due to catastrophic optical damage (COD) is a major concern especially for space applications, since COD-prone lasers typically show no obvious precursor signature of failure. Furthermore, as our group first reported in 2009, these lasers predominantly degrade by a new failure mode (bulk failure) due to catastrophic optical bulk damage (COBD) unlike AlGaAs QW lasers that degrade by a well-known failure mode (facet failure) due to catastrophic optical mirror damage (COMD). Unlike COMD, there have been limited reports on root causes of COBD. In addition, none of decades-long studies of reliability and degradation processes in (Al)GaAs or InGaAs QW lasers by many groups have yielded a reliability model based on the physics of failure. As part of our efforts to develop a physics of failure-based reliability model of InGaAs-AlGaAs strained QW lasers, we continued our investigation by performing short-term and long-term life-tests, failure mode analyses, and root causes investigations using various destructive and non-destructive techniques. All of broad-area and single-mode lasers that we tested degraded by COBD. We employed electron beam induced current (EBIC) techniques to study formation of dark line defects (DLDs) of lasers stressed under different test conditions and time-resolved electroluminescence (TR-EL) techniques to study the dependence of DLD propagation on electrical-thermal stresses via recombination enhanced defect reaction. Also, we employed high-resolution TEM and deep level transient spectroscopy (DLTS) techniques to study extended defects and point defects (and electron traps), respectively. Finally, we report on reliability model parameters obtained from our physics of failure investigation and compare them with those extracted using an empirical model.
机译:广域和单模应变InGaAs-AlGaAs单量子阱(QW)激光器由于其出色的功率和效率特性,对于地面和太空卫星通信系统都是必不可少的组件。但是,由于灾难性光学损伤(COD)而导致的它们的降解模式(灾难性和突发性降解)是一个主要问题,特别是对于空间应用,因为容易产生COD的激光器通常没有明显的前兆故障征兆。此外,正如我们小组在2009年首次报道的那样,这些激光器主要由于灾难性的光学大体积损伤(COBD)而由于新的失效模式(批量失效)而退化,而AlGaAs QW激光器则由于众所周知的失效模式(刻面失效)而退化。造成灾难性的光学镜损坏(COMD)。与COMD不同,关于COBD根本原因的报道很少。此外,许多小组对(Al)GaAs或InGaAs QW激光器的可靠性和退化过程进行了长达数十年的研究,没有得出基于故障物理学的可靠性模型。作为开发InGaAs-AlGaAs应变QW激光器基于故障的可靠性模型的物理学工作的一部分,我们通过进行短期和长期的寿命测试,故障模式分析以及使用各种方法进行的根本原因调查,继续了我们的研究。破坏性和非破坏性技术。我们测试的所有广域和单模激光器都会被COBD降解。我们采用电子束感应电流(EBIC)技术来研究在不同测试条件下受到应力的激光器的暗线缺陷(DLD)的形成,并采用时间分辨电致发光(TR-EL)技术来研究DLD传播对电热应力的依赖性通过重组增强了缺陷反应。此外,我们分别采用高分辨率TEM和深能级瞬态光谱(DLTS)技术来研究扩展缺陷和点缺陷(以及电子陷阱)。最后,我们报告了从故障调查物理学中获得的可靠性模型参数,并将其与使用经验模型提取的参数进行比较。

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