A UNIFIED CHARGE-BASED MODEL FOR SYMMETRIC DG MOSFETs VALID FOR BOTH HEAVILY DOPED BODY AND UNDOPED CHANNEL

摘要

A unified charge-based model for heavily doped and undoped symmetric DG MOSFETs is presented in this paper. Starting from the fundamental MOSFET device physics, an accurate inversion charge equations is developed, which can predict the inversion charge density precisely from weak inversion, through moderate inversion and finally to strong inversion region, valid for both high doped and undoped channel. Based on the obtained charge solution, the unified drain current model is developed from Pao-Sah's dual integral, which prediction shows a good agreement with the numerical simulation results.