Heat Dissipation Simulation of Double-sided Liquid-cooled IGBT Module Package

摘要

In order to alleviate the pressure of energy and environment on human life and social development, the development of electric vehicle industry is very rapid. Insulated Gate Bipolar Transistor ( IGBT ) module with superior performance has become the core component of electric vehicle converter. But limited heat dissipation space and complex packaging structure will cause excessive local temperature of the IGBT chip, and then the chip damaged. Therefore, the packaging structure of IGBT module for efficient heat dissipation is the key to ensure the safe and reliable operation of converters and even electric vehicles. Based on the double-sided forced liquid-cooled packaging structure of high-power IGBT module, a three-dimensional coupled model of heat conduction and coolant flow was established in this paper. Pressure distribution of cooling medium and temperature distribution of chips and the radiator at different inlet flow rates are calculated. The maximum temperature of chip surface and pressure difference between inlet and outlet under different inlet flow rates are analyzed. The results show that when the inlet flow rate is relatively small, the larger the inlet flow rate, the better the heat dissipation effect, but the greater the flow resistance; when the inlet flow rate reaches a certain value, the increase of flow rate can only greatly increase the flow resistance, but the heat dissipation is not obviously improved; the heat dissipation effect of liquid cooled radiator is non-uniform, the chip temperature near the inlet is lower, and the chip temperature near the outlet is higher. Finally, in order to alleviate the local high temperature of the chip near the outlet, graphene-based films (GBFs) were applied to the chips surface near the outlet in this model. The simulation results show that the maximum temperature of the outlet chip decreases to a certain extent with the same fluidity.