Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters

摘要

In this work, we studied the performance enhancement of uniaxially tensile stressed n-FinFETs realized on the biaxially strained GeOI (sGOI) wafer and its impact on the performance of a Ge CMOS inverter. Uniaxially strained Ge film with nanoscale film width could be patterned on sGOI substrates and used for the fabrication of strained Ge FinFETs. The performance of this novelly proposed Ge FinFET was compared with the unstrained ones with similar dimensions and fabrication processes. The impact of strain on devices with different geometric parameters are also studied. As the strained FinFETs lead to higher on-current, its impact on the circuit speed was simulated. By comparing the output signal of the strained Ge CMOS inverter with the unstrained one, the former shows obvious speed improvement.