Deposition of In_2O_3-Al_2O_3-SnO_2 (IATO) transparent conduction thin films using non-vacuum method

摘要

The In_2O_3-Al_2O_3-SnO_2 (In:Al:Sn = 68.8:11.8:8.4, IATO) transparent conduction thin films were synthesized by using the non-vacuum Spray Coating Method (SCM). At first, the IATO power was mixed, calcined at 1100°C, and ground into nano-scale particles, then the 6 wt% IATO particles were dispersed into isopropyl alcohol (IPA) to get the solution for SCM. 0.1 ml IATO solution was sprayed on the 2 cm × 1 cm glass substrates and then the nano-scale IATO solution was carried out the thermal treatment under different temperatures in a furnace in air. The annealing temperature was changed from 200°C to 800°C and the annealing time was 3 h. After annealing, the influences of the annealing temperature on crystallization of the IATO thin films were investigated. The surface and cross-section morphologies, optical transmission ratio, resistivity (ρ), hall mobility (μ), and carrier concentration of the IATO thin films were well investigated in this study.