Calculation of Dielectric Constant of Buffer Layer Graphene on SiC Measured by Spectroscopy Ellipsometry using Gauss-Newton Numerical Inversion Method

摘要

Calculation of dielectric constant of buffer layer graphene on SiC substrate measured by Spectroscopic Ellipsometry using Gauss-Newton inversion method has been done. The data obtained from spectroscopic ellipsometry measurement are amplitude ratio (Ψ) and phase difference (Δ). The results show that Gauss-Newton numerical inversion method can be used to extract the dielectric constant of nanostructured graphene on SiC substrates (in this case buffer layer graphene). Through the Gauss-Newton numerical inversion method, we obtain the thickness of buffer layer is around 0.5 to 1 ML and has different dielectric constant value as compared to that of graphene films.