Extraction of Model Parameters for 14-nm Bulk FinFET

摘要

Extraction procedure for 14 nm bulk FinFET devices is realized in Matlab. Parameters selected for extraction include the threshold voltage at zero bulk voltage (VT0), the output conductance parameter (λ), the parameter, which models the transition between linear and saturation regions (MEXP), the subthreshold parameter (η), and the transconductance (gch). The extraction is based on experimental measurements of 14-nm FinFETs wafers. Extracted parameters are simulated in a PTM MG SPICE model for verification.