Extraction of Substrate Resistance in Bulk FinFETs Through RF Modeling

摘要

A new method to extract substrate resistance (Rsub) for small-sized nano-scale metal oxide semiconductor field effect transistors (MOSFETs) including bulk FinFETs is proposed and compared with conventional method. The Rsub''s extracted from small-size MOSFETs by using the proposed method are shown to have frequency independent characteristics, unlike those from the conventional method. Proposed equivalent circuit explains well the Rsub behavior with body width. The proposed model showed very good agreement (error in Y22~3%) with three-dimensional device simulation