MODEL PARAMETER EXTRACTOR AND MODEL PARAMETER EXTRACTION PROGRAM FOR SEMICONDUCTOR DEVICE MODEL

摘要

PPROBLEM TO BE SOLVED: To perform model parameter extraction so as to eliminate characteristic deflection of a model. PSOLUTION: A model parameter extractor (1) includes: a binning processing unit (18) for performing binning processing; and a model parameter extraction unit (11) for extracting a model parameter for each of multiple bins formed through binning processing. The model parameter extraction unit (11) extracts a first model parameter (P2A) corresponding to a first end (A) of a target bin. A candidate (P2B') for a second model parameter (P2B) corresponding to a second end (B) of the target bin is set based on the first model parameter (P2A). A start-point-side gradient and an end-point-side gradient of a finite curve representing an electrical characteristic of a semiconductor device are specified based on the first model parameter (P2A) and the candidate (P2B') for the second model parameter. Then, the second model parameter (P2B) is extracted based on a result of comparison between the gradients. PCOPYRIGHT: (C)2010,JPO&INPIT