Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

摘要

We present significant performance enhancements of AlGaN/GaN power Schottky diodes on 200 mm silicon substrates achieved by optimizing the anode fabrication and the epitaxial layers. 600V rated AlGaN/GaN power diodes using a MIS (Metal Insulator Semiconductor)-gated Schottky anode were processed using a CMOS compatible process flow transferable to mass production environments. Turn-on voltages V_Taround 0.6 V at 25°C, forward voltages Vf lower than 1.6 V at 100 mA/mm and 25°C, reverse leakage currents I_REVlower than 1 μA/mm at 600 V and 150°C and excellent dynamic performances were achieved and outperform state of the art 600V rated AlGaN/GaN Schottky diodes.