1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material

摘要

In this paper, we report the formation of vertical GaN Schottky barrier diodes (SBDs) on a 2-in. free-standing (FS) GaN wafer, using CMOS-compatible contact material. By realizing an off-state breakdown voltage V-BR of 1200V and an on-state resistance R-on of 7m Omega.cm(2), the FS-GaN SBDs fabricated in this work achieve a power device figure-of-merit V-BR(2)/R-on of 2.1 x 10(8)V(2).Omega(-1).cm(-2) on a high quality GaN wafer. In addition, the fabricated FS-GaN SBDs show the highest I-on/I-off current ratio of similar to 2.3 x 10(10) among the GaN SBDs reported in the literature. (C) 2017 The Japan Society of Applied Physics