SILICON CMOS AND ALGAN/GAN WIDEBAND AMPLIFIERS INTEGRATED ON ENGINEERED SUBSTRATES AND METHOD OF MANUFACTURING THE SAME

摘要

High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon (102) is bonded on a substrate. Following the bonding, an AlGaN/GaN structure (104) is grown over the bonded silicon layer. A silicon nitride or a silicon oxide layer (106) is then deposited over the AlGaN/GaN structure. Following this, a thin layer of silicon is bonded to the silicon nitride/silicon oxide layer. An area for the fabrication of AlGaN/GaN devices is defined, and the silicon is etched away from those areas. Following this, CMOS devices (112) are fabricated on the silicon layer and AlGaN/GaN devices fabricated on the AlGaN/GaN surface.