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Impact of scribe line (kerf) defectivity on wafer yield

机译:划线(切口)缺陷对晶圆良率的影响

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Scribe line (also known as kerf or frame) is an area in a silicon wafer which is used to separate individual die at the end of wafer processing. This area also contains features which assist in the manufacturing process but are not present in a final product. Examples of such features include lithography alignment and overlay marks, thickness measurement pads and electric test macros. The overall design of scribe line features can be drastically different from the die layout. In the chemical mechanical polishing (CMP) process, regions of low pattern density have higher polishing rates compared to those of high pattern density, leading to overpolishing or "dishing". The scribe line, with intermittent regions of low and high pattern density, is naturally more prone to dishing, an issue which is exacerbated by thickness variation at the wafer edge. In this work, we present examples of how interaction between process variation and scribe line design can result in yield loss for the prime die.
机译:划痕线(也称为切缝或边框)是硅晶片中的一个区域,用于在晶片处理结束时分离单个管芯。该区域还包含有助于制造过程的功能,但最终产品中没有这些功能。这样的特征的示例包括光刻对准和覆盖标记,厚度测量垫和电测试宏。划线特征的总体设计可能与管芯布局大不相同。在化学机械抛光(CMP)工艺中,与高图案密度的区域相比,低图案密度的区域具有较高的抛光速率,从而导致过度抛光或“盘化”。具有低和高图案密度的间歇区域的划线自然更容易凹陷,该问题由于晶片边缘处的厚度变化而加剧。在这项工作中,我们提供了一些示例,这些示例说明了工艺变化和划线设计之间的相互作用如何导致原模的良率损失。

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