首页>
外国专利>
WAFER DICING WITH WIDE KERF BY LASER SCRIBING AND PLASMA ETCHING HYBRID APPROACH
WAFER DICING WITH WIDE KERF BY LASER SCRIBING AND PLASMA ETCHING HYBRID APPROACH
展开▼
机译:用激光刻划和等离子刻蚀混合方法在宽切口处进行晶圆切割
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, approaches for wafer dicing with wide kerf by using a laser scribing and plasma etching hybrid approach are described. For example, a method of dicing a semiconductor wafer including a plurality of integrated circuits separated by dicing streets involves forming a mask above the semiconductor wafer, the mask having a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide a patterned mask having a pair of parallel gaps for each dicing street, exposing regions of the semiconductor wafer between the integrated circuits. Each gap of each pair of parallel gaps is separated by a distance. The method also involves etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.
展开▼