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Particle reduction in back end of line plasma-etching process: CFM: Contamination free manufacturing

机译:在线等离子蚀刻工艺后端的颗粒减少:CFM:无污染的制造

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Particle contamination within a plasma-etching chamber causes tool down time in semiconductor manufacturing. The purpose of this work is to investigate the sources of contamination and find an effective solution for Back End of Line (BEOL) processes and improve tool up time. Despite typical maintenance, such as cycling chamber, wiping Electric Static Chuck (ESC) components and replacing chamber consumable parts, particle contamination issue persisted. Contamination analysis and ESC examination suggested etch byproduct redeposition during chuck discharge step as root cause. Modifying the discharge step was found to reduce the particle failure rate from 50% to 7%. This significant improvement confirms redeposition on ESC during discharge step and particle resuspension from ESC surface is the primary source for the particle contamination issue.
机译:等离子体蚀刻室内的颗粒污染会导致半导体制造中的工具停机时间。这项工作的目的是调查污染源,并为生产线后端(BEOL)工艺找到有效的解决方案,并缩短工具的启动时间。尽管进行了典型的维护,例如循环室,擦拭静电卡盘(ESC)组件和更换室用易损件,但仍然存在颗粒污染问题。污染分析和ESC检查表明,在卡盘放电步骤中蚀刻副产物再沉积是根本原因。发现修改排放步骤可以将颗粒失败率从50%降低到7%。这一重大改进证实了在排放步骤中在ESC上的再沉积,并且从ESC表面重新悬浮的颗粒是导致颗粒污染问题的主要来源。

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