Effect of InGaAs as a strain reducing layer on molecular beam epitaxy grown InAs quantum dots

摘要

Theoretical and experimental studies has been presented to understand the impact of InGaAs as a strain reducing layer (SRL) on InAs quantum dots. The ground state photoluminescence peak of InAs quantum dots with varying InGaAs capping layer thickness have been compared with the conventional GaAs capped one. The hydrostatic and biaxial strain distributions of all the samples have also been evaluated. To verify the accuracy of the theoretical work, the simulated data were validated with the experimental data with an average 2.5% error.