Suppressing Oxidation-Enhanced Diffusion of Boron via Buried Epitaxial Oxygen-Inserted Layers in Silicon

摘要

Oxygen-Inserted (OI) layers interposed between boron marker layers are shown to substantially retard diffusion in the lower marker. Simulation of these OI layers and their associated annihilation of interstitials reproduces the experimental results, demonstrating that OI layers effectively preserve boron gradients during oxidation. Integration into CMOS process improves device matching and drive current.