首页>
外国专利>
Method for producing epitaxial wafer with buried diffusion layer and epitaxial wafer with buried diffusion layer
Method for producing epitaxial wafer with buried diffusion layer and epitaxial wafer with buried diffusion layer
展开▼
机译:具有埋入扩散层的外延晶片的制造方法以及具有埋入扩散层的外延晶片
展开▼
页面导航
摘要
著录项
相似文献
摘要
There is disclosed a method for producing an epitaxial wafer with a buried diffusion layer comprising: implanting an impurity into a silicon single crystal wafer; subsequently diffusing the impurity in the wafer to form a diffusion layer; at least removing an oxide film on the diffusion layer; and thereafter forming a silicon epitaxial layer over the wafer to produce a silicon epitaxial wafer with a buried diffusion layer; wherein at least the oxide film on the diffusion layer is removed by etching with hydrofluoric acid to which a surfactant is added, and then the silicon epitaxial layer is formed. There can be provided a method for producing an epitaxial wafer with a buried diffusion layer in which generation of crystal defects in a silicon epitaxial layer is reduced effectively and an epitaxial wafer with a buried diffusion layer.
展开▼