A Non-Resonant Recessed Gate AlGaN/GaN HEMT Terahertz Detector

摘要

A plasma wave device model for THz non-resonant detection is proposed in this paper. The recessed gate (RE) enhanced AlGaN/GaN HEMT structure is adopted for enhancing the detection responsivity with its excellent 2DEG channel controlling. The detector is worked at Dyakonov-Shur instability condition and the radiation frequency detected is in the range of THz. Hydrodynamic equations and asymmetric B.C. are modeled for the plasma device while detection responsivity $(R_{mathrm{v}})$ and noise equivalent power (NEP) are modeled by channel conductance. The numerical results in TCAD show the detection responsivity is 1.3 times higher than conventional single-channel (SC) AlGaN/GaN HEMT with keeping a low NEP of 60 pW/Hz^{0.5, which indicates potential of RE _ HEMT devices in THz detectors.}