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Measuring the wafer temperature in CVD tools using the wireless SensArray HighTemp-400 wafer

机译:使用无线SensArray HighTemp-400晶圆在CVD工具中测量晶圆温度

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As technology nodes become smaller it is getting more important to control all aspects of influencing parameters on the deposition of thin films using a CVD process. It is well known that physical parameters like gas flow or temperature heavily influence the deposition rate and the quality/properties of the deposited thin films. To achieve good chamber to chamber matching of the deposition rate and high quality films it is crucial to control the physical parameters. In this paper we will present the wireless measurement of the temperature on the wafer surface up to 400°C under real temperature and process like conditions using the SensArray HighTemp-400 wafer. This approach paves the way for the control or the monitoring of the temperature on the wafer surface for the thin film deposition processes.
机译:随着技术节点变得越来越小,使用CVD工艺控制影响薄膜沉积的所有参数的各个方面变得越来越重要。众所周知,诸如气流或温度之类的物理参数严重影响沉积速率和沉积薄膜的质量/性质。为了使沉积速率和高质量薄膜达到良好的腔室匹配,控制物理参数至关重要。在本文中,我们将介绍使用SensArray HighTemp-400晶片在真实温度和类似条件下对晶片表面温度进行高达400°C的无线测量。这种方法为薄膜沉积过程中晶片表面温度的控制或监视铺平了道路。

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