Silica filler content in NCP and its effects on the reliability of 3D TSV Multi-Stack under thermal shock test

摘要

3D multi-stack integration with through silicon via (TSV) and non-conductive paste (NCP) is one of the candidate packaging technologies that can successfully meet the requirements of high-end electronic products. A clear relationship should be established between the material properties of NCP and reliability of 3D TSV multi-stack chips. This research aims to characterize the mechanical properties of NCP with 0, 20, 30, and 40 wt% silica filler and examine the influence of different silica contents in NCP on the reliability of 3D TSV multi-stack chips under thermal shock test. Results show that adding silica filler does not influence the curing behavior of the NCP material, although it decreases the coefficient of thermal expansion and increases Young's modulus and viscosity. The thermal shock test reveals that the specimens bonded with NCP without silica filler fail before those bonded with NCP of 40 wt%. The failure mechanism for all specimens is recognized as a crack in the TSV/redistribution layer interface. These results suggest that the NCP is beneficial to the reliability of 3D TSV multi-stack chips.