x) memr'/> Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells
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Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells

机译:温度对基于TaOx的忆阻位单元总电离剂量响应的影响

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The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaOx) memristive bit cells are investigated. The TaOx devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.
机译:温度对氧化钽(TaO)的总电离剂量(TID)响应的影响 x )忆阻性位单元已被研究。 TaO x 设备由桑迪亚国家实验室(SNL)制造。获得的原位数据是温度,累积剂量和伽玛辐照设施(GIF)偏差的函数。数据表明,当温度升高时,重置为高阻态的器件的电阻会降低。但是,未观察到在高温下对TID的敏感性增加。

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