Architecture Choice for Radiation-Hard AlGaN/GaN HEMT Power Devices

摘要

The robustness of GaN-on-Si AlGaN/GaN HEMT power devices against heavy ion and neutron irradiation is investigated. Two different HEMT architectures (pGaN and MISHEMT) are tested under identical irradiation conditions and compared against each other in order to define the optimum solution for radiation hard applications.