A 37–40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process

摘要

A 37-40 GHz power amplifier (PA) has been designed and fabricated on 0.1-μm GaAs pHEMT process. Utilizing two-way direct shunt power combining and low impedance transmission line pre-matching technique, the PA achieves measured saturation output power of 25.6 dBm with peak power added efficiency (PAE) of 28% at 38 GHz. The measured output 1-dB gain compression point is 24.6 dBm and the peak gain is 13.5 dB. The chip size is 2.03 × 1.03 mm².