44.5 GHz PHEMT Power Amplifier

摘要

The work described in this report represents the design phase of a galliumarsenide monolithic microwave integrated circuit (GaAs MMIC) power amplifier using pseudomorphic high electron mobility transistors (PHEMTs). The main purpose was to investigate the possible performance of a power amplifier at 44 GHz for future application in a phased array antenna system. The design of a two stage amplifier, providing over 12 dB of gain over the frequency range 43.5-45.5 GHz, is described along with the expected large signal performance. It is expected that the amplifier will provide over 20 dBm of output power. The final layout of the complete chip is also presented.