A 60 GHz POWER AMPLIFIER USING LANGE COUPLERS IN GaAs 0.15μm pHEMT PROCESS

摘要

This letter proposes a 60 GHz power amplifier (PA) fabricated in GaAs 0.15μm pHEMT process technology. A three-stage topology with Lange couplers is adopted. The measured results show that the proposed PA achieves a gain of 23 dB and a saturated output power of 14.46 dBm at 63.4 GHz, and its peak power-added efficiency is 6.9%.