SRAM stability analysis for different cache configurations due to Bias Temperature Instability and Hot Carrier Injection

摘要

Bias Temperature Instability (BTI) and Hot Carrier Injections (HCI) are two of the main effects that increase a transistor's threshold voltage and further cause performance degradations. These two wearout mechanisms affect all transistors, but are especially acute in the SRAM cells of first-level (L1) caches, which are frequently accessed and are critical for microprocessor performance. This work studies the cache lifetimes due to the combined effect of BTI and HCI for different cache configurations, including variation in cache size, associativity, cache line size, and the replacement algorithm. The effect of process variations is also considered. We analyze the reliability (failure probability) and performance (hit rate) of the L1 cache within a LEON3 microprocessor, while the LEON3 is running a set of benchmarks, and we provide essential insights on performance-reliability tradeoffs for cache designers.