FEOL technologies for fabricating high performance logic and system LSI of 100 nm node

摘要

This paper reviews the FEOL technologies for fabricating the transistor for high performance logic and system LSI devices of 100 nm node, especially, doping process, gate dielectric formation and shallow junction formation using spike annealing. The optimization of ion implantation for gate doping contact source drain, and gate oxide, spike annealing are described.