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Elementary logic circuit obtained by means of field effect transistors of gallium arsenide and compatible with the ECL 100 K technology

机译:通过砷化镓的场效应晶体管获得并与ECL 100 K技术兼容的基本逻辑电路

摘要

An elementary logic circuit obtained by means of Schottky barrier field effect transistors of gallium arsenide includes a differential amplifier, whose first branch, controlled by the input signal E, supplies an output signal S.sub.1, and whose second branch, controlled by a reference signal, supplies an output signal S.sub.2. This circuit further includes two paired level translator stages, the first of which supplies output signal S and the second of which supplies a complementary signal S, the output signal S constituting the reference signal which controls the second branch of the differential amplifier. The circuit can advantageously be used in high-speed IC modules having a lower power consumption, consisting of gallium arsenide and compatible with the circuits realized according to the ECL 100 K technology on silicon.
机译:通过砷化镓的肖特基势垒场效应晶体管获得的基本逻辑电路包括差分放大器,其第一分支由输入信号E控制,提供输出信号S1,并且其第二分支由a信号控制。参考信号,提供输出信号S.sub.2。该电路还包括两个成对的电平转换器级,其第一级提供输出信号S,而第二级提供互补信号S,输出信号S构成控制差分放大器第二分支的参考信号。该电路可以有利地用在具有较低功耗的高速IC模块中,该模块由砷化镓组成,并且与根据ECL 100 K技术在硅上实现的电路兼容。

著录项

  • 公开/公告号US4661725A

    专利类型

  • 公开/公告日1987-04-28

    原文格式PDF

  • 申请/专利权人 U.S. PHILIPS CORPORATION;

    申请/专利号US19850699108

  • 发明设计人 BERNARD CHANTEPIE;

    申请日1985-02-07

  • 分类号H03K19/003;H03K19/01;H03K19/094;H03K3/356;

  • 国家 US

  • 入库时间 2022-08-22 07:09:20

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