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Elementary logic circuit obtained by means of field effect transistors of gallium arsenide and compatible with the ECL 100 K technology
Elementary logic circuit obtained by means of field effect transistors of gallium arsenide and compatible with the ECL 100 K technology
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机译:通过砷化镓的场效应晶体管获得并与ECL 100 K技术兼容的基本逻辑电路
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摘要
An elementary logic circuit obtained by means of Schottky barrier field effect transistors of gallium arsenide includes a differential amplifier, whose first branch, controlled by the input signal E, supplies an output signal S.sub.1, and whose second branch, controlled by a reference signal, supplies an output signal S.sub.2. This circuit further includes two paired level translator stages, the first of which supplies output signal S and the second of which supplies a complementary signal S, the output signal S constituting the reference signal which controls the second branch of the differential amplifier. The circuit can advantageously be used in high-speed IC modules having a lower power consumption, consisting of gallium arsenide and compatible with the circuits realized according to the ECL 100 K technology on silicon.
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