A detailed investigation of charging induced damage due to high power implants was done using SEMATECH SPIDER wafers with sub-50 A{top}o gate oxide thickness. The SPIDER wafers have an active area to gate antenna ratio of up to 1:90K, which enables a high sensitivity for charging related damage. Threshold voltage (V{sub}t) and gate leakage current (I{sub}g) shifts for both n- and p-type devices have been examined as a response to plasma electron flood (PEF) conditions. Results from 180 keV As{sup}+ and P{sup}+ implants at 20 mA and 5 × 10{sup}15/cm{sup}2 dose are presented. The impact of PEF settings on n-mos and p-mos devices is shown and correlated to both in situ charge monitors and CHARM wafers. This work underscores the importance of characterizing PEF operation to obtain optimum charge control.
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