METHOD AND APPARATUS FOR QUANTITATIVELY EVALUATING CHARGE DAMAGE IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE, AND WAFER FOR QUANTITATIVE CHARGE DAMAGE EVALUATION

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for quantitatively evaluating charge damage in a manufacturing process of a semiconductor device, and a wafer for quantitative charge damage evaluation in which the damage of an element can be easily evaluated without a trouble in measurement.;SOLUTION: A plurality of monitoring MOSFETs Q are prepared in a semiconductor wafer. Antenna patterns connected to gate electrodes of the MOSFETs constitute a predetermined antenna ratio suitably distributed in pattern shapes from 100 to 10,000 around, and plasma charge is captured, respectively. Leak current measurement is then performed. In the leak current measurement, a source/drain region is defined as reference potential (ground potential), a gate voltage Vg is defined as a parameter, and a gate voltage value Vgb is searched for a current Ig flowing to the gate electrode 12 to get out of a current allowable range for operation as a product. Data of leak current values are totaled for the entire wafer, and a degree of a defect for the entire wafer is calculated as a defect rate. The defect rate may become a charge damage quantitative index.;COPYRIGHT: (C)2007,JPO&INPIT