Comments, with reply, on 'Dose perturbation by wafer charging during ion implantation' by Y. Sato et al

摘要

The commenter remarks on a statement in the above-titled work by Y. Sato et al., (ibid., vol.5, no.4, pp.329-336, Nov. 1992) concerning a study that the commenter co-authored (M.E. Mack et al., 1985). The statement is that the latter work suggests that beam blowup resulting from wafer charging does not disturb dose control of adjacent wafers in the vicinity of the charging wafer, unlike their own observations. The commenter clarifies this work and argues that the gross dose errors reported by Y. Sato et al. are caused by blowup of the beam through loss of space-charge neutralization over at least 1-m distance. He points out that the use of the flood gun with biased aperture ameliorates the problem. The original authors respond by defending their results.