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Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers
Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers
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机译:在损伤工程植入过程中主动冷却晶圆,以增强SIMOX晶圆中掩埋氧化物的形成
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摘要
The present invention provides methods and system for forming a buried oxide layer (BOX) region in a semiconductor substrate, such as, a silicon wafer. In one aspect, in a method of the invention, an initial dose of oxygen ions is implanted in the substrate while maintaining the substrate temperature in a range of about 300° C. to 600° C. Subsequently, a second dose of oxygen ions is implanted in the substrate while actively cooling the substrate to maintain the substrate temperature in range of about 50° C. to 150° C. These ion implantation steps are followed by an annealing step in an oxygen containing atmosphere to form a continuous BOX region in the substrate. In one preferred embodiment, the initial ion implantation step is performed in a chamber that includes a device for heating the substrate while the second ion implantation step is performed in a separate chamber that is equipped with a device for actively cooling the substrate. The annealing step can be performed in a third chamber or in either of the first or second chambers.
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