The Hitachi advanced implanter UI-6000 for SIMOX wafer production

摘要

To produce high quality SIMOX wafers of 200mm or 300mm in diameter with high throughput, an oxygen ion implanter, Ul-6000, was newly designed and constructed. The implanter operated stably at the wafer temperatures of 500 to 650C and gave 1000mA-class O{sup}+ current in the energy regions required for the low-dose SIMOX wafer fabrication process. The implant test showed that the clean and uniform implantation needed for next generation SIMOX-SOI device fabrication can be successfully realized with the UI-6000.