SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using ~(18)O implantation

摘要

Most recently low-dose (4E17 ions/cm~2) SIMOX technology has been developed in order to restrain the dislocation density and the production cost. However, in- and out-diffusion of oxygen and internal oxidation (ITOX) phenomena have never been understood during high-temperature annealing process as yet. In this study, we use the sample, which was implanted ~(18)O~+ with the dose of 4E17 ions/cm" into silicon substrate and then non-oxidizing anneal was done at around 1300 ℃. As the results, it was proven that the diffusion of oxygen into thermal oxide layer above 1300 ℃ was not in agreement with the Deal―Grove theory. The mechanism of oxygen in- and out-diffusion in SIMOX wafer is discussed.