Fabrication and Characterization of a High-Power-Density, Planar 10 kV SiC MOSFET Power Module

摘要

High-power-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-power-density packaging of 10 kV SiC MOSFETs has the added challenge of maintaining low electric fields in order to prevent premature dielectric breakdown. This work proposes a wire-bond-less, planar structure with embedded decoupling capacitors and stacked ceramic substrates to realize a high-density power module capable of high-speed switching with low electric fields. This is the first time that these advanced packaging techniques have been applied to a 10 kV SiC MOSFET module. The module has power- and gate-loop inductances of 4.4 nH and 3.8 nH and a power density of 18.1 W/mm~3.