High perfomance integrated temperature sensor based on amorphous silicon diode for photonics on CMOS

摘要

A temperature sensor based on a photonic layer-integrated hydrogenated amorphous silicon p-i-n diode is presented. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in a biasing current range ≈34-40 nA has been measured.